Improved Carrier Mobility in Few-Layer MoS<sub>2</sub> Field-Effect Transistors with Ionic-Liquid Gating
نویسندگان
چکیده
Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang, Bhim Prasad Chamlagain, Chongyu Wang, Xuebin Tan, Mark Ming-Cheng Cheng, David Tománek, and Zhixian Zhou* Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States, Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202, United States, and Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States
منابع مشابه
Improved Carrier Mobility in 2 Few - Layer MoS 2 Field - E ff ect 3 Transistors with Ionic - Liquid Gating
12 tracted much attention due to unsur13 passed carrier mobility and high thermal 14 conductivity, 4 combined with excellent 15 chemical and thermal stability down to 16 the nanometer scale. The major drawback 17 is the absence of fundamental band gap, 18 which makes semimetallic graphene unsui19 table for conventional digital logic applica20 tions. Sustained efforts to engineer a band 21 gap i...
متن کاملImproved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.
We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm(2) V(-1) s(-1) at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ≈ 100 cm(2) V(-1) s(-1) at 180 K to ≈ 220 cm(2) V(-...
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2D materials offer a huge number of opportunities in electronic functionalities. One of them is the ease in fabrication of field effect transistor (FET) devices due to their stable and atomically flat surfaces. Actually, FET devices of transition metal chalcogenides and black phosphrous has achieved a high on-off ratios and relatively high mobility and reached observations of quantized Hall eff...
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تاریخ انتشار 2013